Transparent display device and method of manufacturing a transparent display device

ABSTRACT

In a method of manufacturing a transparent display device, a substrate including a pixel region and a transmission region may be provided. A first electrode may be formed on the substrate in the pixel region, and a display layer may be formed on the first electrode. A second electrode facing the first electrode may be formed on the display layer, and a capping structure including a first capping layer and a second capping layer may be formed on the second electrode. The first capping layer may be formed on the second electrode in the pixel region and a first region of the transmission region by using a mask that has an opening, the mask may be shifted, and the second capping layer may be formed on the second electrode in the pixel region and a second region of the transmission region by using the shifted mask.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a divisional application of U.S. patent applicationSer. No. 15/447,798 filed on Mar. 2, 2017, which claims priority under35 USC § 119 to Korean Patent Application No. 10-2016-0059528, filed onMay 16, 2016 in the Korean Intellectual Property Office (KIPO), theentire disclosure of which is incorporated by reference herein.

BACKGROUND 1. Field

Example embodiments relate generally to display devices. Morespecifically, example embodiments relate to transparent display devicesand methods of manufacturing the transparent display devices.

2. Description of the Related Art

Recently, a display device (e.g., an organic light-emitting display(OLED) device) having transparent or light-transmitting properties hasbeen developed.

To manufacture a transparent display device, various variables (e.g., acomposition, a disposition, a thickness, etc.) of components (e.g.,substrates, electrodes, insulation layers, etc.) of the transparentdisplay device, and their various advantages and disadvantages, may beaddressed. For example, the OLED device may include a stack ofinsulation layers that contain different materials. In this case, theinsulation layers may cause optical characteristics (e.g.,transmittance) of the OLED device to be unsatisfactory.

SUMMARY

Example embodiments provide methods of manufacturing transparent displaydevices with reduced manufacturing time and cost.

Example embodiments provide transparent display devices with improvedlight transmittance and luminescent efficiency.

According to an aspect of example embodiments, in a method ofmanufacturing a transparent display device, a substrate may be provided,the substrate including a pixel region and a transmission region. Afirst electrode may be formed over the substrate in the pixel region,and a display layer may be formed on the first electrode. A secondelectrode may be formed on the display layer to face the firstelectrode. A capping structure may be formed on the second electrode,the capping structure including a first capping layer and a secondcapping layer. The first capping layer may be formed on the secondelectrode in the pixel region and a first region of the transmissionregion, by using a mask that has an opening. The mask may then beshifted. The second capping layer may be formed on the second electrodein the pixel region and a second region of the transmission region byusing the shifted mask.

In example embodiments, a width of the opening may be substantiallyequal to the sum of a width of the pixel region and a half of a width ofthe transmission region. An end portion of the first region may beadjacent to an end portion of the second region in the transmissionregion. The capping structure may have a first thickness in the pixelregion and may have a second thickness substantially less than the firstthickness in the transmission region.

In some example embodiments, a width of the opening may be substantiallygreater than the sum of a width of the pixel region and a half of awidth of the transmission region and substantially less than the sum ofthe width of the pixel region and the width of the transmission region.The transmission region may further include a third region in which thefirst region overlaps the second region. The capping structure may havea first thickness in the pixel region and the third region of thetransmission region and may have a second thickness substantially lessthan the first thickness in a remaining region of the transmissionregion, the remaining region being outside the third region.

In some example embodiments, a width of the opening may be substantiallygreater than a width of the pixel region, and substantially less thanthe sum of the width of the pixel region and a half of a width of thetransmission region. The transmission region may further include a thirdregion positioned between the first region and the second region. Thecapping structure may have a first thickness in the pixel region and mayhave a second thickness in the first region and the second region,wherein the second thickness is less than the first thickness.

In example embodiments, an aperture may be formed in the secondelectrode. The aperture may overlap at least a portion of thetransmission region.

According to an aspect of example embodiments, in a method ofmanufacturing a transparent display device, a substrate may be provided,the substrate including a first pixel region, a first transmissionregion, a second pixel region, and a second transmission region. A firstelectrode may be formed over the substrate in each of the first pixelregion and the second pixel region, and a display layer may be formed onthe first electrode. A second electrode may be formed on the displaylayer to face the first electrode. A capping structure may be formed onthe second electrode, the capping structure including a first cappinglayer and a second capping layer. The first capping layer may be formedon the second electrode in the first pixel region, the firsttransmission region, and the second pixel region by using a mask thathas an opening. The mask may then be shifted. The second capping layermay be formed on the second electrode in the first pixel region, thesecond pixel region, and a second transmission region by using theshifted mask.

In example embodiments, a width of the opening may be substantiallyequal to the sum of a width of the first pixel region, a width of thefirst transmission region, and a width of the second pixel region. Thecapping structure may have a first thickness in the first pixel regionand the second pixel region and may have a second thickness less thanthe first thickness in the first transmission region and the secondtransmission region.

According to another aspect of example embodiments, a transparentdisplay device may include a substrate including a pixel region and atransmission region which are arranged along a first direction, a firstelectrode disposed over the substrate in the pixel region, a displaylayer disposed on the first electrode, a second electrode facing thefirst electrode and disposed on the display layer, and a cappingstructure disposed on the second electrode. The capping structure mayinclude a first capping layer disposed on the second electrode in thepixel region and a first region of the transmission region and a secondcapping layer disposed on the second electrode in the pixel region and asecond region of the transmission region.

In example embodiments, an end portion of the first region may beadjacent to an end portion of the second region in the transmissionregion. The capping structure may have a first thickness in the pixelregion, and may have a second thickness less than the first thickness inthe transmission region.

In some example embodiments, the transmission region may further includea third region in which the first region overlaps the second region. Thecapping structure may have a first thickness in the pixel region and thethird region of the transmission region and may have a second thicknessless than the first thickness in a remaining region of the transmissionregion, the remaining region being outside the third region.

In some example embodiments, the transmission region may further includea third region positioned between the first region and the secondregion. The capping structure may have a first thickness in the pixelregion and may have a second thickness less than the first thickness inthe first region and the second region.

In example embodiments, a thickness of the first capping layer may besubstantially equal to a thickness of the second capping layer.

In example embodiments, the transparent display device may furtherinclude a plurality of unit pixels each including one of the pixelregions and one of the transmission regions, the plurality of unitpixels being arranged along a second direction perpendicular to thefirst direction. The capping structure may be provided in at least oneunit pixel of the plurality of unit pixels.

In example embodiments, the capping structure may extend across morethan one unit pixel of the plurality of unit pixels. In some exampleembodiments, a plurality of the capping structures may be provided, andones of the capping structures may be provided separately in respectiveones of the unit pixels.

In example embodiments, the pixel region may include a red sub-pixelregion, a green sub-pixel region, and a blue sub-pixel region which arearranged along a second direction perpendicular to the first direction.

In example embodiments, the second electrode may include an apertureoverlapping at least a portion of the transmission region.

According to another aspect of example embodiments, a transparentdisplay device may include a substrate including a first pixel region, afirst transmission region, a second pixel region, and a secondtransmission region, a first electrode disposed over the substrate ineach of the first pixel region and the second pixel region, a displaylayer disposed on the first electrode, a second electrode facing thefirst electrode and disposed on the display layer, and a cappingstructure disposed on the second electrode. The capping structure mayinclude a first capping layer disposed on the second electrode in thefirst pixel region, the first transmission region, and the second pixelregion and a second capping layer disposed on the second electrode inthe first pixel region, the second pixel region, and the secondtransmission region.

In example embodiments, the capping structure may have a first thicknessin the first pixel region and the second pixel region, and may have asecond thickness less than the first thickness in the first transmissionregion and the second transmission region.

According to example embodiments, in methods of manufacturing atransparent display device, a first capping layer and a second cappinglayer which have substantially the same area may be formed by shiftingone mask, so that a resulting capping structure that has substantiallydifferent thicknesses in the pixel region and the transmission regionmay be formed. According to example embodiments, the transparent displaydevice may include the capping structure that has substantiallydifferent thicknesses in the pixel region and the transmission region,so that light transmittance and luminescent efficiency of thetransparent display device may be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

Illustrative, non-limiting example embodiments will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings.

FIG. 1 is a plan view illustrating a transparent display device inaccordance with example embodiments.

FIG. 2 is a plan view illustrating further details of an area I of thetransparent display device in FIG. 1.

FIG. 3 is a cross-sectional view illustrating a transparent displaydevice in accordance with example embodiments.

FIG. 4 is a cross-sectional view illustrating a transparent displaydevice in accordance with some example embodiments.

FIG. 5 is a cross-sectional view illustrating a transparent displaydevice in accordance with some example embodiments.

FIGS. 6 to 8 are cross-sectional views illustrating transparent displaydevices in accordance with some example embodiments.

FIGS. 9 to 15 are cross-sectional views illustrating a method ofmanufacturing a transparent display device in accordance with exampleembodiments.

FIGS. 16 and 17 are cross-sectional views illustrating a method ofmanufacturing a transparent display device in accordance with someexample embodiments.

FIGS. 18 and 19 are cross-sectional views illustrating a method ofmanufacturing a transparent display device in accordance with someexample embodiments.

FIG. 20 is a cross-sectional view illustrating a method of manufacturinga transparent display device in accordance with some exampleembodiments.

FIG. 21 is a plan view illustrating a transparent display device inaccordance with example embodiments.

FIG. 22 is a plan view illustrating a transparent display device inaccordance with some example embodiments.

FIG. 23 is a plan view illustrating further details of an area II of thetransparent display device in FIG. 1.

FIG. 24 is a cross-sectional view illustrating a transparent displaydevice in accordance with example embodiments.

FIGS. 25 to 31 are cross-sectional views illustrating a method ofmanufacturing a transparent display device in accordance with exampleembodiments.

FIG. 32 is a plan view illustrating a transparent display device inaccordance with example embodiments.

FIG. 33 is a plan view illustrating a transparent display device inaccordance with some example embodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, transparent display devices and methods of manufacturingthe transparent display devices in accordance with example embodimentswill be explained in detail with reference to the accompanying drawings.The various figures are not necessarily to scale. All numerical valuesare approximate, and may vary. All examples of specific materials andcompositions are to be taken as nonlimiting and exemplary only. Othersuitable materials and compositions may be used instead.

FIG. 1 is a plan view illustrating a transparent display device inaccordance with example embodiments. FIG. 2 is a plan view illustratingfurther details of an area I of the transparent display device inFIG. 1. FIG. 3 is a cross-sectional view illustrating a transparentdisplay device in accordance with example embodiments. For example, FIG.3 may be a cross sectional view cut along a line in FIG. 2.

Referring to FIGS. 1 and 2, the transparent display device may include aplurality of unit pixels PX. The unit pixels PX may be arranged along afirst direction and a second direction which are substantially parallelwith a top surface of a substrate (100 in FIG. 3) and substantiallyperpendicular to each other.

Each of the unit pixels PX may include a pixel region 10 and atransmission region 20. A plurality of sub-pixel regions may be disposedin the pixel region 10. In example embodiments, the pixel region 10 mayinclude a red sub-pixel region 11, a green sub-pixel region 12, and ablue sub-pixel region 13. For example, the sub-pixel regions 11 to 13may be arranged along the second direction.

FIGS. 1 and 2 illustrate that the sub-pixel regions 11 to 13 havesubstantially the same area. However, the red sub-pixel region 11, thegreen sub-pixel region 12, and the blue sub-pixel region 13 may havedifferent relative sizes or areas, so as to improve luminescentefficiency.

The transmission region 20 may extend to be adjacent to the redsub-pixel region 11, the green sub-pixel region 12, and the bluesub-pixel region 13. In example embodiments, the transmission region 20may be provided individually to each of the unit pixels PX. In someexample embodiments, the transmission region 20, for example, may extendalong the second direction, and may be provided commonly to a pluralityof the unit pixels PX. That is, a separate transmission region 20 may beprovided for each sub-pixel region, or a common transmission region 20may be provided for more than one, or for all, sub-pixel regions.

In example embodiments, a pixel circuit for implementation of an imagemay be disposed in the pixel region 10. External light may pass throughthe transmission region 20, so that an external image may be observed.

A transistor (e.g., a thin film transistor; TFT) may be disposed in eachof the sub-pixel regions of the pixel region 10. The transistor may beelectrically connected to a data line 151 and a scan line 136. Asillustrated in FIG. 2, the data line 151 and the scan line 136 may crosseach other. In example embodiments, the pixel circuit may include thedata line 151, the scan line 136, the transistor, etc.

The pixel circuit, for example, may further include a power supply line(not shown in FIG. 2) substantially parallel with the data line 151. Thepixel circuit may further include a capacitor electrically connectedbetween the power supply line and the transistor.

FIG. 2 illustrates that one transistor is disposed in each of thesub-pixel regions. However, two or more transistors may be disposed ineach of the sub-pixel regions. For example, a switching transistor and adriving transistor may be disposed in each of the sub-pixel regions. Thecapacitor may be electrically connected between the switching transistorand the driving transistor.

Referring to FIG. 3, the transistor may be disposed on the substrate 100in the pixel region 10. The transistor may include an active pattern120, a gate insulation layer 130, a gate electrode 135, an insulationinterlayer 140, a source electrode 150 and a drain electrode 155. Thetransistor may be covered by a via insulation layer 160, and a firstelectrode 170 electrically connected to the drain electrode 155 of thetransistor may be disposed on the via insulation layer 160.

A transparent insulation substrate may be used as the substrate 100. Forexample, the substrate 100 may include glass or polymer that istransparent and flexible. The transparent display device may be providedas a transparent flexible display device when the substrate 100 includesa polymer. For example, the substrate 100 may include a high molecularmaterial such as polyimide, polysiloxane, epoxy based resin, acryl basedresin, polyester, etc.

The substrate 100 may be divided into the pixel region 10 and thetransmission region 20 as mentioned above. FIG. 3 illustrates a firstpixel region 10 a and a first transmission region 20 a included in afirst unit pixel PXa, and a second pixel region 10 b and a secondtransmission region 20 b included in a second unit pixel PXb. However,unless otherwise specified, the first pixel region 10 a and the secondpixel region 10 b will be referred as the pixel region 10 and the firsttransmission region 20 a and the second transmission region 20 b will bereferred as the transmission region 20, since the first unit pixel PXaand the second unit pixel PXb are substantially the same.

The buffer layer 110 may be formed on the top surface of the substrate100. In some example embodiments, the buffer layer 110 may be providedcommonly in the pixel region 10 and the transmission region 20 on thesubstrate 100. In some example embodiments, the buffer layer 110 may besubstantially provided only in the pixel region 10 on the substrate 100.The buffer layer 110 may block a permeation of vapor through thesubstrate 100, and may block a diffusion of impurities between thesubstrate 100 and a structure disposed thereon. For example, the bufferlayer 110 may include silicon oxide, silicon nitride or siliconoxynitride. These may be used alone or in any combination thereof. Insome example embodiments, the buffer layer 110 may have a multi-layeredstructure including a silicon oxide layer and a silicon nitride layer.

The active pattern 120 may be disposed on the buffer layer 110 in thepixel region 10. The active pattern 120 may include a silicon compoundsuch as polysilicon. In some example embodiments, a source region and adrain region each including p-type or n-type impurities may be disposedon opposing ends of the active pattern 120.

In some example embodiments, the active pattern 120 may include an oxidesemiconductor, e.g., indium gallium zinc oxide (IGZO), zinc tin oxide(ZTO), indium tin zinc oxide (ITZO), or the like.

The gate insulation layer 130 may be disposed on the buffer layer 110,and may cover the active pattern 120. In example embodiments, the gateinsulation layer 130 may include silicon oxide, silicon nitride orsilicon oxynitride. In some example embodiments, the gate insulationlayer 130 may have a multi-layered structure including a silicon oxidelayer and a silicon nitride layer.

As illustrated in FIG. 3, the gate insulation layer 130 may extendacross both the pixel region 10 and the transmission region 20, similarto the buffer layer 110. In some example embodiments, the gateinsulation layer 130 may be substantially selectively disposed only inthe pixel region 10.

The gate electrode 135 may be disposed on the gate insulation layer 130.The gate electrode 135 may substantially overlap the active pattern 120with respect to the gate insulation layer 130.

The gate electrode 135 may be electrically connected to the scan line136. For example, as illustrated in FIG. 2, the gate electrode 135 mayformed to extend from the scan line 136.

The gate electrode 135 may include a metal such as silver (Ag),magnesium (Mg), aluminum (Al), tungsten (W), copper (Cu), nickel (Ni),chromium (Cr), molybdenum (Mo), titanium (Ti), platinum (Pt), tantalum(Ta), neodymium (Nd) and scandium (Sc), an alloy thereof, or a nitridethereof. These may be used alone or in any combination thereof. The gateelectrode 135 may include at least two metal layers having differentphysical and/or chemical properties. For example, the gate electrode 135may have a multi-layered structure such as an Al/Mo structure or a Ti/Custructure.

The insulation interlayer 140 may be disposed on the gate insulationlayer 130, and may cover the gate electrode 135. In example embodiments,the insulation interlayer 140 may include silicon oxide, silicon nitrideand/or silicon oxynitride. In some example embodiments, the insulationinterlayer 140 may have a multi-layered structure including a siliconoxide layer and a silicon nitride layer.

As illustrated in FIG. 3, the insulation interlayer 140 may commonlyextend across both the pixel region 10 and the transmission region 20,similar to the buffer layer 110. In some example embodiments, theinsulation interlayer 140 may be substantially selectively disposed onlyin the pixel region 10.

The source electrode 150 and the drain electrode 155 may contact theactive pattern 120 through the insulation interlayer 140 and the gateinsulation layer 130. Each of the source electrode 150 and the drainelectrode 155 may include a metal such as Ag, Mg, Al, W, Cu, Ni, Cr, Mo,Ti, Pt, Ta, Nd and Sc, an alloy thereof, or a nitride thereof. These maybe used alone or in some combination thereof. For example, each of thesource electrode 150 and the drain electrode 155 may have amulti-layered structure having at least two metal layers which havedifferent physical and/or chemical properties, such as an Al layer and aMo layer.

The source electrode 150 and the drain electrode 155 may contact thesource region and the drain region of the active pattern 120,respectively. A portion of the active pattern 120 between the sourceregion and the drain region may serve as a channel through which chargesmay be moved or transferred.

As illustrated in FIG. 2, the source electrode 150 may be electricallyconnected to the data line 151. For example, the source electrode 150may extend from the data line 151.

FIG. 3 illustrates that the transistor has a top gate structure in whichthe gate electrode 135 is disposed over the active pattern 120. However,the transistor may have a bottom gate structure in which the gateelectrode 135 is disposed under the active pattern 120.

The via insulation layer 160 may be disposed on the insulationinterlayer 140, and may cover the source electrode 150 and the drainelectrode 155. A via structure electrically connecting the firstelectrode 170 and the drain electrode 155 to each other may beaccommodated in the via insulation layer 160. The via insulation layer160 may have a substantially planar or leveled top surface, and mayserve as a planarization layer for structures thereon.

The via insulation layer 160 may include an organic material, e.g.,polyimide, an epoxy-based resin, an acryl-based resin, polyester, or thelike. In example embodiments, the via insulation layer 160 may becommonly disposed in both the pixel region 10 and the transmissionregion 20. In some example embodiments, the via insulation layer 160 maybe substantially selectively disposed in just the pixel region 10.

The first electrode 170 may be disposed on the via insulation layer 160,and may include a via structure extending through the via insulationlayer 160 to be in contact with, or electrically connected to, the drainelectrode 155. In example embodiments, the first electrode 170 may beindividually disposed per each of the sub-pixel regions. The firstelectrode 170 may serve as a pixel electrode or an anode.

In an embodiment, the first electrode 170 may include a transparentconductive material having a relatively high work function. For example,the first electrode 170 may include indium tin oxide (ITO), indium zincoxide (IZO), zinc oxide, or indium oxide. In this case, a lighttransmittance of the transparent display device may be further improved.

In an embodiment, the first electrode 170 may serve as a reflectiveelectrode. In this case, the first electrode 170 may include a metal,e.g., Al, Mg, Ag, W, Cu, Ni, Cr, Mo, Ti, Pt, Ta, Nd or Sc, or an alloythereof.

In an embodiment, the first electrode 170 may have a multi-layeredstructure including the transparent conductive material and the metal.

A pixel defining layer 180 may be disposed on the via insulation layer160, and may cover a peripheral portion of the first electrode 170. Thepixel defining layer 180 may include a transparent organic material suchas polyimide or an acryl-based resin.

Each of the sub-pixel regions included in the pixel region 10 may beexposed by the pixel defining layer 180. An area of the first electrode170 which is not covered by the pixel defining layer 180 may besubstantially equal to a light emitting area of each of the sub-pixelregions. In example embodiments, the pixel defining layer 180 may extendto the transmission region 20. In some example embodiments, the pixeldefining layer 180 may not extend to the transmission region 20, and maybe substantially selectively disposed only in the pixel region 10.

A display layer 200 may be disposed on the pixel defining layer 180 andthe first electrode 170. For example, the display layer 200 may bedisposed on a sidewall of the pixel defining layer 180 and a top surfaceof the first electrode 170 exposed by the pixel defining layer 180.

The display layer 200 may include an organic light emitting layerpatterned individually for the red sub-pixel region 11, the greensub-pixel region 12, and the blue sub-pixel region 13 to generate adifferent color at each of the sub-pixel regions. The organic lightemitting layer may include a host material excited by holes andelectrons, and a dopant material facilitating an emitting efficiencythrough absorbing and releasing energy.

In some embodiments, the display layer 200 may further include a holetransport layer (HTL) between the first electrode 170 and the organiclight emitting layer. The display layer 200 may further include anelectron transport layer (ETL) on the organic light emitting layer.

The HTL may include a hole transport material, e.g.,4,4′-bis[N-(1-naphtyl)-N-phenyl amino]biphenyl (NPB),4,4′-bis[N-(3-methylphenyl)-N-phenyl amino]biphenyl (TPD),N,N′-di-1-naphtyl-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPD),N-phenylcarbazole, polyvinylcarbazole, or a combination thereof.

The ETL may include an electron transport material, e.g.,tris(8-quinolinolato)aluminum (Alq3),2-(4-biphenylyl)-5-4-tert-butylphenyl-1,3,4-oxadiazole (PBD),bis(2-methyl-8-quinolinolato)-4-phenylphenolato-aluminum (BAlq),bathocuproine (BCP), triazole (TAZ), phenylquinazoline, or a combinationthereof.

In example embodiments, different from the organic light emitting layer,each of the HTL and the ETL may not be patterned individually for thered sub-pixel region 11, the green sub-pixel region 12 and the bluesub-pixel region 13, and may instead be provided commonly for thesub-pixel regions 11, 12 and 13.

In some embodiments, at least one of the organic light emitting layer,the HTL and the ETL may not be individually patterned for each of thesub-pixel regions, and may instead be provided commonly for a pluralityof the sub-pixel regions. In an embodiment, the organic light emittinglayer may be provided commonly for the plurality of the sub-pixelregions, and a color of each of the sub-pixel regions may be achieved bya color filter. In this case, the transparent display device may serveas a white-OLED (W-OLED) device.

In some embodiments, the display layer 200 may include a liquid crystallayer instead of the organic light emitting layer. In this case, thetransparent display device may be provided as a liquid crystal display(LCD) device.

A second electrode 210 may be disposed on the pixel defining layer 180and the display layer 200. The second electrode 210 may face the firstelectrode 170 with respect to the display layer 200.

In example embodiments, the second electrode 210 may serve as a commonelectrode commonly provided for a plurality of the sub-pixel regions.The second electrode 210 may serve as a cathode of the transparentdisplay device.

In example embodiments, the second electrode 210 may include a metalhaving a low work function such as Ag, Mg, Al, W, Cu, Ni, Cr, Mo, Ti,Pt, Ta, Nd, Sc, or an alloy thereof.

In some example embodiments, the second electrode 210 may include analloy of Ag and Mg (e.g., Ag_(x)Mg_(1-x)).

The second electrode 210 may continuously extend across both the pixelregion 10 and the transmission region 20. A thickness of the secondelectrode 210 may be determined in consideration of a luminescentefficiency in the pixel region 10 and a desired light transmittance inthe transmission region 20. In some embodiments, the second electrode210 may be substantially removed in the transmission region 20.

A capping structure 220 may be disposed on the second electrode 210. Inexample embodiments, the capping structure 220 may substantially cover atop surface of the second electrode 210, and may be commonly providedacross both the pixel region 10 and the transmission region 20.

The capping structure 220 may include a first capping layer 222 and asecond capping layer 224. The first capping layer 222 may be disposed onthe second electrode 210 in the pixel region 10, and on a first region21 of the transmission region 20. In example embodiments, the firstcapping layer 222 may cover the top surface of the second electrode 210,and may be commonly provided in both the pixel region 10 and the firstregion 21 of the transmission region 20. For example, the first region21 may be a region adjacent to the first pixel region 10 a in the firsttransmission region 20 a.

The second capping layer 224 may be disposed on the second electrode 210in the pixel region 10, and in a second region 22 of the transmissionregion 20. In example embodiments, the second capping layer 224 maycover the top surface of the second electrode 210 and a top surface ofthe first capping layer 222, and may be commonly provided across thepixel region 10 and the second region 22 of the transmission region 20.For example, the second region 22 may be a region spaced apart from thefirst pixel region 10 a in the first transmission region 20 a. In otherwords, the second region 22 may be adjacent to the second pixel region10 b.

In example embodiments, an end portion of the first region 21 and an endportion of the second region 22 may be substantially adjacent to eachother in the transmission region 20. In other words, the first region 21and the second region 22 may not overlap, and may not be spaced apartfrom each other. In example embodiments, an area of the first region 21and an area of the second region 22 may be substantially the same. Forexample, each of the area of the first region 21 and the area of thesecond region 22 may be substantially equal to a half of an area of thetransmission region 20.

In example embodiments, the capping structure 220 may have a firstthickness in the pixel region 10, and may have a second thickness lessthan the first thickness in the transmission region 20. For example, thefirst thickness may correspond to the sum of a thickness of the firstcapping layer 222 and a thickness of the second capping layer 224.

In example embodiments, the first capping layer 222 and the secondcapping layer 224 may have substantially the same thickness. In thiscase, the capping structure 220 may have a substantially uniformthickness throughout the transmission region 20.

Each of the first capping layer 222 and the second capping layer 224 mayinclude an organic material having an improved transmissive property. Insome embodiments, each of the first capping layer 222 and the secondcapping layer 224 may include a material substantially the same as orsimilar to the hole transport material. Thus, a light emitting propertyin the pixel region 10 may not be disturbed by the second electrode 210serving as the cathode.

In example embodiments, the thickness of the first capping layer 222 andthe thickness of the second capping layer 224 may be determined inconsideration of improving or maximizing luminescent efficiency in thepixel region 10 and improving or maximizing light transmittance in thetransmission region 20.

As mentioned above, when the capping structure 220 has a first thicknesssubstantially equal to the sum of the thickness of the first cappinglayer 222 and the thickness of the second capping layer 224 in the pixelregion 10, and has a second thickness substantially equal to thethickness of the first capping layer 222 or the thickness of the secondcapping layer 224 in the transmission region 20, the luminescentefficiency in the pixel region 10 as well as the light transmittance inthe transmission region 20 may be improved.

In a conventional transparent display device, a capping layer having asubstantially uniform thickness and provided commonly across both thepixel region and the transmission region may be disposed on the secondelectrode. However, luminescent efficiency in the pixel region may bereduced when the capping layer has a relatively small thickness, andlight transmittance in the transmission region may be reduced when thecapping layer has a relatively large thickness.

According to example embodiments then, the capping structure 220 mayhave a first thickness in the pixel region 10 and may have a secondthickness less than the first thickness in the transmission region 20,so that luminescent efficiency in the pixel region 10 as well as lighttransmittance in the transmission region 20 may both be improved.

In some example embodiments, as illustrated in FIG. 3, an encapsulationsubstrate 250 may be disposed over the capping structure 220, and afilling layer 240 may be interposed between the capping structure 220and the encapsulation substrate 250. A bonding member may be disposedbetween a peripheral portion of the substrate 100 and a peripheralportion of the encapsulation substrate 250 to store the filling layer240 and to combine the substrate 100 and the encapsulation substrate250.

The encapsulation substrate 250 may include a glass substrate or apolymer substrate. The filling layer 240 may include, e.g., asubstantially transparent or transmissive organic material. In someembodiments, an organic/inorganic complex layer may be utilized as asealing film instead of the encapsulation substrate 250 and the fillinglayer 240. In this case, the bonding member may not be needed.

FIG. 4 is a cross-sectional view illustrating a transparent displaydevice in accordance with some example embodiments.

The transparent display device illustrated in FIG. 4 may have elementsand/or constructions substantially the same as or similar to thetransparent display device illustrated in FIG. 3, except forconstructions of the first capping layer 222 and the second cappinglayer 224 in the transmission region 20. Therefore, detaileddescriptions of repeated elements and/or constructions are omitted, andlike reference numerals are used to designate like elements.

Referring to FIG. 4, the transmission region 20 may further include athird region 23 in which at least a portion of the first region 21 andat least a portion of the second region 22 overlap. In other words, thefirst region 21 in which the first capping layer 222 is disposed, andthe second region 22 in which the second capping layer 224 is disposed,may at least partially overlap, and the area of overlap may be definedas the third region 23. For example, the first capping layer 222 may bedisposed on the second electrode 210 and the second capping layer 224may be disposed on the first capping layer 222 in the third region 23,similar to the pixel region 10.

In example embodiments, an area of the first region 21 and an area ofthe second region 22 may be substantially the same. For example, each ofthe area of the first region 21 and the area of the second region 22 maybe substantially greater than a half of an area of the transmissionregion 20.

In example embodiments, the capping structure 220 may have a firstthickness in the pixel region 10 and in the third region 23 of thetransmission region 20, and may have a second thickness less than thefirst thickness in a remaining transmission region 20 outside the thirdregion 23. For example, the first thickness may be substantially equalto the sum of a thickness of the first capping layer 222 and a thicknessof the second capping layer 224, and the second thickness may besubstantially equal to either the thickness of the first capping layer222 or the thickness of the second capping layer 224.

In example embodiments, the first capping layer 222 and the secondcapping layer 224 may have substantially the same thickness. In thiscase, the capping structure 220 may have a substantially uniformthickness throughout the remaining transmission region 20 except for thethird region 23.

FIG. 5 is a cross-sectional view illustrating a transparent displaydevice in accordance with some example embodiments.

The transparent display device illustrated in FIG. 5 may have elementsand/or constructions substantially the same as or similar to thetransparent display device illustrated in FIGS. 3 and 4, except forconstructions of the first capping layer 222 and the second cappinglayer 224 in the transmission region 20. Therefore, detaileddescriptions of repeated elements and/or constructions are omitted, andlike reference numerals are used to designate like elements.

Referring to FIG. 5, the transmission region 20 may further include athird region 23 between the first region 21 and the second region 22. Inother words, the first region 21 in which the first capping layer 222 isdisposed, and the second region 22 in which the second capping layer 224is disposed, may be spaced apart from each other. The intervening spacebetween the first region 21 and the second region 22 may be defined asthe third region 23. For example, an opening defined by a sidewall ofthe first capping layer 222, a sidewall of the second capping layer 224and an exposed top surface of the second electrode 210 may be formed inthe third region 23.

In example embodiments, an area of the first region 21 and an area ofthe second region 22 may be substantially the same. For example, each ofthe area of the first region 21 and the area of the second region 22 maybe substantially less than a half of an area of the transmission region20.

In example embodiments, the capping structure 220 may have a firstthickness in the pixel region 10, and may have a second thickness lessthan the first thickness in the first region 21 and the second region22. For example, the first thickness may be substantially equal to a sumof a thickness of the first capping layer 222 and a thickness of thesecond capping layer 224, and the second thickness may be substantiallyequal to the individual thickness of the first capping layer 222 or theindividual thickness of the second capping layer 224.

In example embodiments, the first capping layer 222 and the secondcapping layer 224 may have substantially the same thickness. In thiscase, the capping structure 220 may have a substantially uniformthickness throughout a remaining transmission region 20 except for thethird region 23.

FIGS. 6 to 8 are cross-sectional views illustrating transparent displaydevices in accordance with some example embodiments.

The transparent display device illustrated in FIGS. 6 to 8 may haveelements and/or constructions substantially the same as or similar tothe transparent display device illustrated in FIG. 3, except forconstructions of the second electrode 210, the pixel defining layer 180,the via insulation layer 160, the insulation interlayer 140, the gateinsulation layer 130 and/or the buffer layer 110 in the transmissionregion 20. Therefore, detailed descriptions of any repeated elementsand/or constructions are omitted, and like reference numerals are usedto designate like elements.

Referring to FIG. 6, the second electrode 210 may include an aperture215 that overlaps at least a portion of the transmission region 20. Insome example embodiments, the aperture 215 may overlap substantially allof the transmission region 20. For example, the capping structure 220may be disposed on a top surface of the pixel defining layer 180 whichis exposed by the aperture 215 of the second electrode 210. As thesecond electrode 210 includes apertures 215, the light transmittance ofthe transmission region 20 may be improved.

Referring to FIG. 7, at least portions of the pixel defining layer 180and the via insulation layer 160 may be substantially removed. Inexample embodiments, a transparent window 260 may be defined by a topsurface of the insulation interlayer 140, a sidewall of the viainsulation layer 160, and a sidewall of the pixel defining layer 180 inthe transmission region 20. As the transparent window 260 is formed, thelight transmittance of the transmission region 20 may be improved. Inthis case, the capping structure 220 may be formed conformally along asurface of the second electrode 210 and a surface of the transparentwindow 260.

Referring to FIG. 8, at least portions of the insulation interlayer 140,the gate insulation layer 130 and the buffer layer 110 may besubstantially removed. In example embodiments, a transparent window 260may be defined by a top surface of the substrate 100, a sidewall of thebuffer layer 110, a sidewall of the gate insulation layer 130, asidewall of the insulation interlayer 140, a sidewall of the viainsulation layer 160, and a sidewall of the pixel defining layer 180 inthe transmission region 20. As the transparent window 260 is formed, thelight transmittance of the transmission region 20 may be improved. Inthis case, the capping structure 220 may be formed conformally along asurface of the second electrode 210 and a surface of the transparentwindow 260.

FIGS. 6 to 8 illustrate that the first capping layer 222 and the secondcapping layer 224 are adjacent to each other as illustrated in FIG. 3,but the invention is not limited thereto.

The aperture 215 of the second electrode 210 and the transparent window260 in the transmission region 20 illustrated in FIGS. 6 to 8 may beapplied to a transparent display device in which the first capping layer222 and the second capping layer 224 overlap as illustrated in FIG. 4,or a transparent display device in which the first capping layer 222 andthe second capping layer 224 are spaced apart as illustrated in FIG. 5.

FIGS. 9 to 15 are cross-sectional views illustrating a method ofmanufacturing a transparent display device in accordance with exampleembodiments. For example, FIGS. 9 to 15 illustrate a method ofmanufacturing the transparent display device in FIG. 3.

Referring to FIG. 9, a substrate 100 may be provided on a carriersubstrate 50, and then a buffer layer 110 may be formed on the substrate100.

The carrier substrate 50 may serve as a supporter for the substrate 100during a manufacturing process of the transparent display device. Forexample, a glass substrate or a metal substrate may be utilized as thecarrier substrate 50.

The substrate 100 may be formed using glass or a transparent polymersuch as a polyimide-based resin. For example, a precursor compositioncontaining a polyimide precursor may be coated on the carrier substrate50 by, e.g., a spin coating process to form a coating layer. The coatinglayer may be thermally cured to form the substrate 100. The polyimideprecursor may include a diamine and a dianhydride. The precursorcomposition may be prepared by dissolving the polyimide precursor in anorganic solvent. The organic solvent may include, e.g.,N-methyl-2-pyrrolidone (NMP), dimethylformamide (DMF), tetrahydrofuran(THF), triethylamine (TEA), ethylacetate, dimethylsulfoxide (DMSO) or anethylene glycol-based ether solvent. These may be used alone or in anycombination thereof.

The diamine and the dianhydride may be polymerized by the thermal curingprocess so that a polyamic acid may be created, and the polyamic acidmay be additionally cured and condensed to form the polyimide-basedresin. In one embodiment, when a glass substrate is utilized as thesubstrate 100, a process of using the carrier substrate 50 may beomitted.

The substrate 100 may be divided into a pixel region 10 and atransmission region 20. FIG. 9 illustrates a first pixel region 10 a, afirst transmission region 20 a, a second pixel region 10 b, and a secondtransmission region 20 b. However, unless otherwise specified, the firstpixel region 10 a and the second pixel region 10 b will be referred asthe pixel region 10, and the first transmission region 20 a and thesecond transmission region 20 b will be referred as the transmissionregion 20, since the first pixel region 10 a and the first transmissionregion 20 a are substantially the same as the second pixel region 10 band the second transmission region 20 b, respectively.

The buffer layer 110 may substantially cover a top surface of thesubstrate 100, and may be formed using silicon oxide, silicon nitrideand/or silicon oxynitride. As illustrated in FIG. 9, the buffer layer110 may be commonly formed across both the pixel region 10 and thetransmission region 20. In some embodiments, the buffer layer 110 may beselectively formed in only the pixel region 10.

Referring to FIG. 10, an active pattern 120, a gate electrode 135, asource electrode 150, a drain electrode 155, and additional insulationlayers may be formed on the buffer layer 110.

The active pattern 120 may be formed on the buffer layer 110 in thepixel region 10. For example, a semiconductor layer including amorphoussilicon or polysilicon may be formed on the buffer layer 110, and thenmay be patterned to form the active pattern 120. In some embodiments, acrystallization process, e.g., a low temperature polycrystalline silicon(LTPS) process or a laser crystallization process, may be furtherperformed after the formation of the semiconductor layer. In someembodiments, the semiconductor layer may be formed of an oxidesemiconductor such as IGZO, ZTO or ITZO.

A gate insulation layer 130 covering the active pattern 120 may beformed on the buffer layer 110. The gate insulation layer 130 may beformed of silicon oxide, silicon nitride and/or silicon oxynitride.

As illustrated in FIG. 10, the gate insulation layer 130 may extendcontinuously across both the pixel region 10 and the transmission region20. In some embodiments, the gate insulation layer 130 may be patternedto be present selectively in the pixel region 10.

The gate electrode 135 may be formed on the gate insulation layer 130,and may substantially overlap the active pattern 120. For example, afirst conductive layer may be formed on the gate insulation layer 130.The first conductive layer may be patterned by, e.g., aphoto-lithography process, to form the gate electrode 135. The firstconductive layer may be formed using a metal, an alloy or a metalnitride. The first conductive layer may also be formed by depositing aplurality of metal layers.

The gate electrode 135 may be formed together with a scan line 136illustrated in FIG. 2. For example, the gate electrode 135 and the scanline 136 may be formed from the first conductive layer by substantiallythe same etching process, and the scan line 136 may be integral with thegate electrode 135.

In some embodiments, impurities may be implanted into the active pattern120 using the gate electrode 135 as an ion-implantation mask, such thata source region and a drain region may be formed at both ends of theactive pattern 120.

An insulation interlayer 140 covering the gate electrode 135 may beformed on the gate insulation layer 130. The insulation interlayer 140may include stepped portions according to profiles of the active pattern120 and the gate electrode 135. The insulation interlayer 140 may beformed of silicon oxide, silicon nitride and/or silicon oxynitride.

As illustrated in FIG. 10, the insulation interlayer 140 may extendcommonly across both the pixel region 10 and the transmission region 20.In some embodiments, at least a portion of the insulation interlayer 140formed in the transmission region 20 may be removed.

The insulation interlayer 140 and the gate insulation layer 130 may bepartially removed by, e.g., a photo process, to form contact holes. Thecontact holes may be formed through the insulation interlayer 140 andthe gate insulation layer 130, such that a top surface of the activepattern 120 may be partially exposed. For example, the source region andthe drain region of the active pattern 120 may be exposed through thecontact holes.

A source electrode 150 and a drain electrode 155 may be formed in thecontact holes. The source electrode 150 and the drain electrode 155 maybe in contact with the source region and the drain region, respectively.For example, a second conductive layer sufficiently filling the contactholes may be formed on the insulation interlayer 140. The secondconductive layer may be patterned by a photo-lithography process, toform the source electrode 150 and the drain electrode 155. The secondconductive layer may be formed using a metal, a metal nitride or analloy.

Accordingly, a transistor, e.g., a thin film transistor including theactive pattern 120, the gate insulation layer 130, the gate electrode135, the source electrode 150 and the drain electrode 155 may be formedon the substrate 100 in the pixel region 10. For example, a plurality ofsub-pixel regions may be included in the pixel region 10 as illustratedin FIGS. 1 and 2, and at least one transistor may be formed in each ofthe sub-pixel regions.

Additionally, a pixel circuit including the transistor, a data line 151and the scan line 136 may be formed on the substrate 100. The sourceelectrode 150 may be electrically connected to the data line 151 asillustrated in FIG. 2. For example, the source electrode 150, the drainelectrode 155 and the data line 151 may be formed from the secondconductive layer by substantially the same etching process.

A via insulation layer 160 may be formed to cover the insulationinterlayer 140, the source electrode 150 and the drain electrode 155.The via insulation layer 160 may extend commonly across both the pixelregion 10 and the transmission region 20, and may have a substantiallyplanar or leveled upper surface. Indeed, the via insulation layer 160may serve as a planarization layer for the transparent display device.

The via insulation layer 160 may be formed using an organic materialsuch as polyimide, an epoxy-based resin, an acryl-based resin orpolyester, by a spin coating process or a slit coating process. Forexample, the via insulation layer 160 may be partially removed by, e.g.,a photo process, to form a via hole. In example embodiments, a topsurface of the drain electrode 155 may be at least partially exposedthrough the via hole.

As illustrated in FIG. 10, the via insulation layer 160 may extendcommonly across each of the pixel region 10 and the transmission region20. In some embodiments, the via insulation layer 160 may be patternedto be present selectively in the pixel region 10.

Referring to FIG. 11, a first electrode 170 and a pixel defining layer180 may be formed on the via insulation layer 160.

For example, a third conductive layer filling the via hole may be formedon the via insulation layer 160 and the exposed drain electrode 155, andmay be patterned to form the first electrode 170. The first electrode170 may serve as a pixel electrode and/or an anode of the transparentdisplay device. The third conductive layer may be formed of a metal suchas Ag, Mg, Al, W, Cu, Ni, Cr, Mo, Ti, Pt, Ta, Nd, Sc, etc., or an alloythereof.

The buffer layer 110, the semiconductor layer, the gate insulation layer130, the insulation interlayer 140, and the first to third conductivelayers may be formed by at least one of a chemical vapor deposition(CVD) process, a plasma enhanced chemical vapor deposition (PECVD)process, a high density plasma-chemical vapor deposition (HDP-CVD)process, a thermal evaporation process, a vacuum deposition process, aspin coating process, a sputtering process, an atomic layer deposition(ALD) process and a printing process.

The pixel defining layer 180 may be formed on the via insulation layer160 to cover a peripheral portion of the first electrode 170. Forexample, a photosensitive organic material such as a polyimide resin oran acryl resin may be coated, and then exposure and developing processesmay be performed to form the pixel defining layer 180. In someembodiments, the pixel defining layer 180 may be formed of a polymericmaterial or an inorganic material by a printing process, e.g., an inkjetprinting process.

As illustrated in FIG. 11, the pixel defining layer 180 may extendcommonly across both the pixel region 10 and the transmission region 20.In some embodiments, the pixel defining layer 180 may be patterned to bepresent selectively in the pixel region 10.

In example embodiments, the pixel defining layer 180 and the viainsulation layer 160 formed in the transmission region 20 may beselectively removed, so that the pixel defining layer 180 and the viainsulation layer 160 may remain only in the pixel region 10.Accordingly, the light transmittance of the transmission region 20 maybe improved. In some example embodiments, the insulation interlayer 140,the gate insulation layer 130, and the buffer layer 110 formed in thetransmission region 20, as well as the pixel defining layer 180 and thevia insulation layer 160 formed in the transmission region 20, may beselectively removed so that the insulation interlayer 140, the gateinsulation layer 130, and the buffer layer 110 may selectively remainonly in the pixel region 10. Accordingly, the light transmittance of thetransmission region 20 may be further improved.

Referring to FIG. 12, a display layer 200 and a second electrode 210 maybe sequentially formed on the pixel defining layer 180 and the firstelectrode 170.

The display layer 200 may be formed using an organic light emittingmaterial for generating a red color of light, a green color of light ora blue color of light per each of the sub-pixel regions on the firstelectrode 170 exposed by the pixel defining layer 180. For example, thedisplay layer 200 may be formed by a spin coating process, a rollprinting process, a nozzle printing process, an inkjet process, etc.,using a fine metal mask (FMM) that may include an opening through whicha region corresponding to a red sub-pixel region, a green sub-pixelregion, or a blue sub-pixel region is exposed. Accordingly, an organiclight emitting layer, including the organic light emitting material, maybe individually formed in each of the sub-pixel regions.

A hole transport layer may be formed before the formation of the organiclight emitting layer, using the above-mentioned hole transport material.An electron transport layer may be also formed on the organic lightemitting layer, using the above-mentioned electron transport material.In some example embodiments, unlike the organic light emitting layer,the hole transport layer and the electron transport layer may extendcommonly over every sub-pixel region, rather than being individuallypatterned for each sub-pixel region. In some example embodiments, thehole transport layer and the electron transport layer may be included inthe display layer 200, and may be patterned or printed per each of thesub-pixel regions. For example, as illustrated in FIG. 12, the displaylayer 200 of each of the sub-pixel regions may be confined by a sidewallof the pixel defining layer 180.

In some embodiments, at least one of the organic emitting layer, thehole transport layer and the electron transport layer may not beindividually patterned for each of the sub-pixel regions, and mayinstead be formed commonly across a plurality of the sub-pixel regions.In an embodiment, the organic light emitting layer may be formed for aplurality of the sub-pixel regions, and a color of each of the sub-pixelregions may be achieved by a color filter. In this case, the transparentdisplay device may serve as a white-OLED (W-OLED) device.

A metal having a low work function such as Al, Mg, Ag, W, Cu, Ni, Cr,Mo, Ti, Pt, Ta, Nd or Sc, or an alloy of these metals, may be depositedon the display layer 200 to form a second electrode 210. The secondelectrode 210 may serve as a common electrode and/or a cathode of thetransparent display device. For example, an open mask, including anopening through which the pixel region 10 and the transmission region 20are commonly exposed, may be used to deposit the metal by, e.g., asputtering process, for the formation of the second electrode 210. Thesecond electrode 210 may be formed common to the pixel region 10 and thetransmission region 20 without an additional patterning process, so thatthe overall fabrication process may be simplified, and an electricalresistance of the second electrode 210 may be reduced.

In some example embodiments, the second electrode 210 may be formed ofAg, Mg or an alloy thereof. Further, a thickness of the second electrode210 may be determined according to a desired luminescent efficiency inthe pixel region 10 and a desired light transmittance in thetransmission region 20.

Referring to FIGS. 13 and 14, a capping structure 220 may be formed onthe second electrode 210.

A first capping layer 222 may be formed on the second electrode 210, inboth the pixel region 10 and a first region 21 of the transmissionregion 20. A second capping layer 224 may then be formed on the firstcapping layer 222 in the pixel region 10, and in a second region 22 ofthe transmission region 20. For example, the first region 21 may be aregion adjacent to a first pixel region 10 a in a first transmissionregion 20 a, and the second region 22 may be a region spaced apart fromthe first pixel region 10 a in the first transmission region 20 a. Inother words, the first region 21 may be adjacent to the first pixelregion 10 a, and the second region 22 may be adjacent to a second pixelregion 10 b.

As illustrated in FIG. 13, the first capping layer 222 may be formed inthe pixel region 10 and the first region 21 by using a mask 310 thatincludes an opening 315. Specifically, after disposing the mask 310 suchthat the opening 315 corresponds to the first pixel region 10 a and thefirst region 21, the first capping layer 222 may be formed using thehole transport material line of organic material. The mask 310 may be,for example, a fine metal mask (FMM).

Then, as illustrated in FIG. 14, the second capping layer 224 may beformed in the pixel region 10 and the second region 22 by shifting themask 310. Specifically, after shifting the mask 310 such that theopening 315 corresponds to the second pixel region 10 b and the secondregion 22, the second capping layer 224 may be formed using the holetransport material line of organic material. For example, the secondcapping layer 224 may be formed of material substantially the same asthat of the first capping layer 222. FIG. 14 illustrates that the mask310 is shifted along the first direction, but the invention need not belimited thereto. For example, the mask 310 may be shifted along adirection substantially opposite to the first direction.

The same mask 310 may be used in the formation of both the first cappinglayer 222 and the second capping layer 224, so that the first cappinglayer 222 and the second capping layer 224 may have substantially thesame size areas. In this manner, a capping structure 220 including thefirst capping layer 222 and the second capping layer 224 may be formed.

In example embodiments, a width of the opening 315 may be substantiallyequal to the sum of a width of the pixel region 10 and a half of a widthof the transmission region 20. Accordingly, the first capping layer 222and the second capping layer 224 may overlap each other across theentirety of the pixel region 10. An end portion of the first region 21in which the first capping layer 222 is formed, and an end portion ofthe second region 22 in which the second capping layer 224 is formed,may be substantially adjacent to each other in the transmission region20. In other words, in the transmission region 20, the first cappinglayer 222 and the second capping layer 224 may not overlap and also maynot be spaced apart from each other.

In example embodiments, the capping structure 220 may have a firstthickness in the pixel region 10, and may have a second thickness lessthan the first thickness in the transmission region 20. In someembodiments, the first capping layer 222 and the second capping layer224 may have a substantially the same thickness. Accordingly, thecapping structure 220 may have the second thickness in the transmissionregion 20, and may have the first thickness, which is about twice thesecond thickness, in the pixel region 10.

As mentioned above, the capping structure 220 having different thicknessin the pixel region 10 and the transmission region 20 may be formed byshifting one mask 310, so that manufacturing time and cost of thecapping structure 220 may be reduced, and a transparent display devicewith improved luminescent efficiency and light transmittance may bemanufactured.

Referring to FIG. 15, a filling layer 240 and an encapsulation substrate250 may be layered on the capping structure 220. The carrier substrate50 may also be detached from the substrate 100. For example, when thesubstrate 100 is a plastic substrate, the carrier substrate 50 may bedetached from the substrate 100 by a laser-lifting process or byapplying a mechanical tension.

FIGS. 16 and 17 are cross-sectional views illustrating a method ofmanufacturing a transparent display device in accordance with someexample embodiments.

For example, FIGS. 16 and 17 illustrate a method of manufacturing thetransparent display device illustrated in FIG. 4. Detailed descriptionsof processes and/or elements already described with reference to FIGS. 9to 15 will be omitted.

Referring to FIGS. 16 and 17, the capping structure 220 may be formed onthe second electrode 210.

As illustrated in FIG. 16, the first capping layer 222 may be formed inthe pixel region 10 and the first region 21 by using a mask 320 thatincludes an opening 325. Specifically, after disposing the mask 320 suchthat the opening 325 corresponds to the first pixel region 10 a and thefirst region 21, the first capping layer 222 may be formed using thehole transport material line of organic material. The mask 320 may be,for example, a fine metal mask (FMM).

Then, as illustrated in FIG. 17, the second capping layer 224 may beformed in the pixel region 10 and the second region 22 by shifting themask 320. Specifically, after shifting the mask 320 such that theopening 325 corresponds to the second pixel region 10 b and the secondregion 22, the second capping layer 224 may be formed using the holetransport material line of organic material. For example, the secondcapping layer 224 may be formed of material substantially the same asthat of the first capping layer 222. FIG. 17 illustrates that the mask320 is shifted along the first direction, but the invention need not belimited thereto. For example, the mask 320 may be shifted along adirection substantially opposite to the first direction.

The same mask 320 may be used for the formation of the first cappinglayer 222 and the second capping layer 224, so that the first cappinglayer 222 and the second capping layer 224 may have substantially thesame size areas. In this manner, the capping structure 220 including thefirst capping layer 222 and the second capping layer 224 may be formed.

In example embodiments, a width of the opening 325 may be substantiallygreater than the sum of a width of the pixel region 10 and a half of awidth of the transmission region 20. Accordingly, the first cappinglayer 222 and the second capping layer 244 may overlap each otherthroughout the entirety of the pixel region 10. Additionally, the firstcapping layer 222 and the second capping layer 224 may overlap in atleast a portion of the transmission region 20. In other words, thetransmission region 20 may further include a third region 23 in whichthe first capping layer 222 and the second capping layer 224 overlapeach other.

In example embodiments, the capping structure 220 may have a firstthickness in the pixel region 10, may have the first thickness in thethird region 23, and may have a second thickness less than the firstthickness in the rest of transmission region 20 outside the third region23. In some embodiments, the first capping layer 222 and the secondcapping layer 224 may have substantially the same thickness.Accordingly, the capping structure 220 may have the second thickness inthat portion of transmission region 20 outside the third region 23, andmay have the first thickness about twice of the second thickness in thepixel region 10 and the third region 23. Here, light transmittance inthe third region 23 may be reduced when the third region 23 has thefirst thickness. However, an area of the third region 23 in thetransmission region 20 may be minimized, so that reduction of lighttransmittance in the transmission region 20 may be prevented orminimized.

FIGS. 18 and 19 are cross-sectional views illustrating a method ofmanufacturing a transparent display device in accordance with someexample embodiments.

For example, FIGS. 18 and 19 illustrate a method of manufacturing thetransparent display device illustrated in FIG. 5. Detailed descriptionsof processes and/or elements already described with reference to FIGS. 9to 15, and FIGS. 16 and 17 will be omitted.

Referring to FIGS. 18 and 19, the capping structure 220 may be formed onthe second electrode 210.

As illustrated in FIG. 18, the first capping layer 222 may be formed inthe pixel region 10 and the first region 21 by using a mask 330 thatincludes an opening 335. Specifically, after disposing the mask 330 suchthat the opening 335 corresponds to the first pixel region 10 a and thefirst region 21, the first capping layer 222 may be formed using thehole transport material line of organic material. The mask 330 may be,for instance, a fine metal mask (FMM).

Then, as illustrated in FIG. 19, the second capping layer 224 may beformed in the pixel region 10 and the second region 22 by shifting themask 330. Specifically, after shifting the mask 330 such that theopening 335 corresponds to the second pixel region 10 b and the secondregion 22, the second capping layer 224 may be formed using the holetransport material line of organic material. For example, the secondcapping layer 224 may be formed of material substantially the same asthat of the first capping layer 222. FIG. 19 illustrates that the mask330 is shifted along the first direction, but the invention need not belimited thereto. For example, the mask 330 may instead be shifted alonga direction substantially opposite to the first direction.

The same mask 330 may be used for the formation of the first cappinglayer 222 and the second capping layer 224, so that the first cappinglayer 222 and the second capping layer 224 may have substantially thesame size areas. In this manner, a capping structure 220 including thefirst capping layer 222 and the second capping layer 224 may be formed.

In example embodiments, a width of the opening 335 may be substantiallygreater than a width of the pixel region 10, and may be substantiallyless than a sum of the width of the pixel region 10 and half of a widthof the transmission region 20. Accordingly, the first capping layer 222and the second capping layer 244 may overlap across an entirety of thepixel region 10. Additionally, the first capping layer 222 and thesecond capping layer 224 may not be formed in, or absent from, at leasta portion of the transmission region 20. In other words, thetransmission region 20 may further include a third region 23 between thefirst region 21 and the second region 22, in which the first cappinglayer 222 and the second capping layer 224 are both absent.

In example embodiments, the capping structure 220 may have a firstthickness in the pixel region 10, and may have a second thickness lessthan the first thickness in the first region 21 and the second region22. Additionally, an opening defined by a sidewall of the first cappinglayer 222, a sidewall of the second capping layer 224, and an exposedtop surface of the second electrode 210 may be formed. In someembodiments, the first capping layer 222 and the second capping layer224 may have substantially the same thickness. Accordingly, the cappingstructure 220 may have the second thickness in the first region 21 andthe second region 22, and may have the first thickness, which is abouttwice the second thickness, in the pixel region 10. Here, lighttransmittance in the third region 23 may be reduced when the opening isformed in the third region 23. However, an area of the third region 23in the transmission region 20 may be minimized, so that reduction oflight transmittance in the transmission region 20 may be prevented orminimized.

FIG. 20 is a cross-sectional view illustrating a method of manufacturinga transparent display device in accordance with some exampleembodiments.

In particular, FIG. 20 illustrates a method of manufacturing thetransparent display device illustrated in FIG. 6. Detailed descriptionson processes and/or elements already described with reference to FIGS. 9to 15 will be omitted.

Referring to FIG. 20, an aperture 215 overlapping at least a portion ofthe transmission region 20 may be formed in the second electrode 210. Asillustrated in FIG. 12, a portion of the second electrode 210 is removedfrom the transmission region 20 to form the aperture 215. As an aperture215 is formed in the second electrode 210, a light transmittance in thetransmission region 20 may be improved.

In some example embodiments, the aperture 215 may substantially coverthe entirety of the transmission region 20. In this case, as an area ofthe aperture 215 increases, the light transmittance in the transmissionregion 20 may be further improved.

FIG. 21 is a plan view illustrating a transparent display device inaccordance with example embodiments. FIG. 22 is a plan view illustratinga transparent display device in accordance with some exampleembodiments.

For example, FIGS. 21 and 22 illustrate a transparent display device asdescribed in FIG. 3. However, the invention may be not limited thereto,and FIGS. 21 and 22 may be applied to other transparent display devicessuch as those illustrated in FIGS. 4 to 8.

Referring to FIGS. 21 and 22, the transparent display device may includea plurality of unit pixels PX. The unit pixels PX may be arranged alongthe first direction and the second direction, which as shown aresubstantially perpendicular to each other. For example, N pixel rows maybe arranged along the first direction, and M pixel columns may bearranged along the second direction in the transparent display device.Here, each of N and M may be a positive integer. Each of the unit pixelsPX may include a pixel region 10 and a transmission region 20.

The capping structure 220 may cover the pixel region 10 and thetransmission region 20. The capping structure 220 may include the firstcapping layer 222 and the second capping layer 224. In exampleembodiments, the first capping layer 222 may cover the pixel region 10of a k-th pixel row, and a transmission region 20 adjacent thereto. Thesecond capping layer 224 may cover the pixel region 10 of a (k+1)-thpixel row and part of the transmission region 20 of the k-th pixel row.Here, k may be a positive integer between 1 through N−1.

In some example embodiments, as illustrated in FIG. 21, the cappingstructure 220 may be commonly disposed on multiple unit pixels PXarranged along the second direction. In this case, each of the firstcapping layer 222 and the second capping layer 224 may have a stripeshape.

In some example embodiments, as illustrated in FIG. 22, the cappingstructure 220 may be individually disposed on each of the unit pixels PXarranged along the second direction. In this case, each of the firstcapping layer 222 and the second capping layer 224 may have an islandshape.

FIG. 23 is a plan view illustrating an area II of the transparentdisplay device in FIG. 1. FIG. 24 is a cross-sectional view illustratinga transparent display device in accordance with example embodiments. Forexample, FIG. 24 is a cross-sectional view cut along a line IV-IV′ inFIG. 23.

The transparent display device illustrated in FIG. 24 may have elementsand/or constructions substantially the same as or similar to thetransparent display device illustrated in FIGS. 3 to 5, except forconstructions of the first capping layer 222 and the second cappinglayer 224. Therefore, detailed descriptions of repeated elements and/orconstructions are omitted, and like reference numerals are used todesignate like elements.

Referring to FIGS. 1, 23, and 24, the transparent display device mayinclude a pixel region 10 and a transmission region 20. FIG. 24illustrates a first pixel region 10 a and a first transmission region 20a included in a first unit pixel PXa, a second pixel region 10 b and asecond transmission region 20 b included in a second unit pixel PXb, anda third pixel region 10 c included in a third unit pixel PXc. However,unless otherwise specified, the first pixel region 10 a, the secondpixel region 10 b, and the third pixel region 10 c will be referred asthe pixel region 10 and the first transmission region 20 a and thesecond transmission region 20 b will be referred as the transmissionregion 20, since the first unit pixel PXa, the second unit pixel PXb,and the third unit pixel PXc are substantially the same.

A capping structure 220 may be disposed on the second electrode 210. Inexample embodiments, the capping structure 220 may substantially cover atop surface of the second electrode 210, and may be provided commonlyacross both the pixel region 10 and the transmission region 20.

The capping structure 220 may include a first capping layer 222 and asecond capping layer 224. The first capping layer 222 may be disposed onthe second electrode 210 in the first pixel region 10 a, the firsttransmission region 20 a, and the second pixel region 10 b.

In example embodiments, the first capping layer 222 may cover the topsurface of the second electrode 210, and may be provided commonly acrosseach of the first pixel region 10 a, the first transmission region 20 a,and the second pixel region 10 b. For example, the first transmissionregion 20 a may be disposed between the first pixel region 10 a and thesecond pixel region 10 b.

The second capping layer 224 may be disposed on the second electrode 210in the first pixel region 10 a, the second pixel region 10 b, and thesecond transmission region 20 b. In example embodiments, the secondcapping layer 224 may cover the top surface of the second electrode 210,and may be provided commonly across each of the first pixel region 10 a,the second pixel region 10 b, and the second transmission region 20 b.For example, the second transmission region 20 b may be disposed betweenthe second pixel region 10 b and the third pixel region 10 c.

In example embodiments, the capping structure 220 may have a firstthickness in the pixel region 10, and may have a second thickness lessthan the first thickness in the transmission region 20. For example, thefirst thickness may be substantially equal to the sum of a thickness ofthe first capping layer 222 and a thickness of the second capping layer224, and the second thickness may be substantially equal to just thethickness of the first capping layer 222 or the thickness of the secondcapping layer 224.

In example embodiments, the first capping layer 222 and the secondcapping layer 224 may have substantially the same thickness. In thiscase, the capping structure 220 may have a substantially uniformthickness throughout in the first transmission region 20 a and thesecond transmission region 20 b.

Each of the first capping layer 222 and the second capping layer 224 mayinclude an organic material having an improved transmissive property. Insome embodiments, each of the first capping layer 222 and the secondcapping layer 224 may include a material substantially the same as orsimilar to the hole transport material. Thus, a light emitting propertyin the pixel region 10 may not be disturbed by the second electrode 210serving as the cathode.

In example embodiments, the thickness of the first capping layer 222 andthe thickness of the second capping layer 224 may be determined inconsideration of improving or maximizing luminescent efficiency in thepixel region 10 and improving or maximizing light transmittance in thetransmission region 20.

As mentioned above, when the capping structure 220 has the firstthickness substantially equal to the sum of the thickness of the firstcapping layer 222 and the thickness of the second capping layer 224 inthe pixel region 10, and has the second thickness substantially equal tothe thickness of the first capping layer 222 or the thickness of thesecond capping layer 224 in the transmission region 20, the luminescentefficiency in the pixel region 10 as well as the light transmittance inthe transmission region 20 may be improved.

FIGS. 25 to 31 are cross-sectional views illustrating a method ofmanufacturing a transparent display device in accordance with exampleembodiments.

As an example, FIGS. 25 to 31 illustrate a method of manufacturing thetransparent display device illustrated in FIG. 24. Detailed descriptionson processes and/or elements previously described with reference toFIGS. 9 to 15, FIGS. 16 and 17, and FIGS. 18 and 19 will be omitted.

Referring to FIGS. 25 to 28, processes substantially the same as orsimilar to the processes explained in reference with FIGS. 9 to 12 maybe performed. Accordingly, a substrate 100 and a buffer layer 110 may beformed on a carrier substrate 50, and a transistor including an activepattern 120, a gate insulation layer 130, a gate electrode 135, aninsulation interlayer 140, a source electrode 150, a drain electrode155, and a via insulation layer 160 covering the transistor may beformed. A first electrode 170 and a pixel defining layer 180 may beformed, and a display layer 200 and a second electrode 210 may beformed.

Referring to FIGS. 29 and 30, a capping structure 220 may be formed onthe second electrode 210. The capping structure 220 may include a firstcapping layer 222 and a second capping layer 224.

The first capping layer 222 may be formed on the second electrode 210 inthe first pixel region 10 a, the first transmission region 20 a, and thesecond pixel region 10 b. The second capping layer 224 may be formed onthe second electrode 210 in the first pixel region 10 a, the secondpixel region 10 b, and the second transmission region 20 b. The firsttransmission region 20 a may be disposed between the first pixel region10 a and the second pixel region 10 b, and the second transmissionregion 20 b may be disposed between the second pixel region 10 b and thethird pixel region 10 c.

As illustrated in FIG. 29, the first capping layer 222 may be formed inthe first pixel region 10 a, the first transmission region 20 a, and thesecond pixel region 10 b by using a mask 340 that includes an opening345. Specifically, after disposing the mask 340 such that the opening345 corresponds to the first pixel region 10 a, the first transmissionregion 20 a, and the second pixel region 10 b, the first capping layer222 may be formed using the hole transport material line of organicmaterial. As one example, the mask 340 may be a fine metal mask (FMM).

Then, as illustrated in FIG. 30, the second capping layer 224 may beformed in the second pixel region 10 b, the second transmission region20 b, and the third pixel region 10 c by shifting the mask 340.Specifically, after shifting the mask 340 such that the opening 345corresponds to the second pixel region 10 b, the second transmissionregion 20 b, and the third pixel region 10 c, the second capping layer224 may be formed using the hole transport material line of organicmaterial. For example, the second capping layer 224 may be formed ofmaterial substantially the same as that of the first capping layer 222.FIG. 30 illustrates that the mask 340 is shifted along the firstdirection, but the invention is not limited thereto. For example, themask 340 may be shifted along a direction substantially opposite to thefirst direction.

The same mask 340 may be used for the formation of the first cappinglayer 222 and the second capping layer 224, so that the first cappinglayer 222 and the second capping layer 224 may have substantially thesame area sizes. In this manner, a capping structure 220 including thefirst capping layer 222 and the second capping layer 224 may be formed.

In example embodiments, a width of the opening 345 may be substantiallyequal to the sum of a width of the first pixel region 10 a, a width ofthe first transmission region 20 a, and a width of the second pixelregion 10 b. In other words, the width of the opening 345 may besubstantially the same as the sum of twice a width of the pixel region10 and a width of the transmission region 20. Accordingly, the firstcapping layer 222 and the second capping layer 224 may overlap across anentirety of the pixel region 10. Additionally, either the first cappinglayer 222 or the second capping layer 224 may be formed in thetransmission region 20. For example, only the first capping layer 222may be formed in the first transmission region 20 a, and only the secondcapping layer 224 may be formed in the second transmission region 20 b.

In example embodiments, the capping structure 220 may have a firstthickness in the first pixel region 10 a, the second pixel region 10 b,and the third pixel region 10 c, and may have a second thickness lessthan the first thickness in the first transmission region 20 a and thesecond transmission region 20 b. In other words, the capping structure220 may have the first thickness in the pixel region 10, and may havethe second thickness in the transmission region 20. In some embodiments,the first capping layer 222 and the second capping layer 224 may havesubstantially the same thickness. Accordingly, the capping structure 220may have the second thickness in the transmission region 20, and mayhave the first thickness, which is about twice of the second thickness,in the pixel region 10.

As mentioned above, a capping structure 220 having different thicknessesin the pixel region 10 and the transmission region 20 may be formed byshifting one mask 340, so that manufacturing time and cost of thecapping structure 220 may be reduced, and a transparent display devicewith improved luminescent efficiency and light transmittance may bemanufactured. Additionally, the capping structure 220 with an uniformthickness in the transmission region 20 may be formed.

Referring to FIG. 31, processes substantially the same as or similar tothe processes explained in reference with FIG. 15 may be performed. Morespecifically, a filling layer 240 and an encapsulation substrate 250 maybe formed on the capping structure 220, and the carrier substrate 50 maybe detached from the substrate 100.

FIG. 32 is a plan view illustrating a transparent display device inaccordance with example embodiments. FIG. 33 is a plan view illustratinga transparent display device in accordance with some exampleembodiments. FIGS. 32 and 33 may illustrate, among others, thetransparent display device illustrated in FIG. 24.

The transparent display device illustrated in FIGS. 32 and 33 may haveelements and/or constructions substantially the same as or similar tothe transparent display device illustrated in FIGS. 21 and 22, exceptfor constructions of the first capping layer 222 and the second cappinglayer 224. Therefore, detailed descriptions of repeated elements and/orconstructions are omitted, and like reference numerals are used todesignate like elements.

Referring to FIGS. 32 and 33, the capping structure 220 may cover thepixel region 10 and the transmission region 20. The capping structure220 may include the first capping layer 222 and the second capping layer224. In example embodiments, the first capping layer 222 may cover thepixel region 10 of a (2k−1)-th pixel row, the transmission region 20 ofthe (2k−1)-th pixel row, and the pixel region 10 of the (2k)-th pixelrow. The second capping layer 224 may cover the pixel region 10 of the(2k)-th pixel row, the transmission region 20 of the (2k)-th pixel row,and the pixel region 10 of a (2k+1)-th pixel row. Here, k may be apositive integer between 1 through (N−1)/2.

In some example embodiments, as illustrated in FIG. 32, the cappingstructure 220 may be commonly disposed on the unit pixels PX arrangedalong the second direction. In this case, each of the first cappinglayer 222 and the second capping layer 224 may have a stripe shape.

In some example embodiments, as illustrated in FIG. 33, the cappingstructure 220 may be individually disposed per each of the unit pixelsPX arranged along the second direction. In this case, each of the firstcapping layer 222 and the second capping layer 224 may have an islandshape.

The transparent display devices according to example embodiments may beapplied to various electronic devices such as computers, notebooks, cellphones, smart phones, smart pads, personal media players (PMPs),personal digital assistances (PDAs), MP3 players, or the like, as wellas display devices with improved light transmittance such as navigationsystems for automobiles, head-up displays, or the like.

Although a few example embodiments have been described, those skilled inthe art will readily appreciate that many modifications are possible inthe example embodiments without materially departing from the novelteachings and advantages of the present inventive concept. Variousfeatures of the above described and other embodiments can thus be mixedand matched in any manner, to produce further embodiments consistentwith the invention.

What is claimed is:
 1. A transparent display device comprising: asubstrate including a first pixel region, a first transmission region, asecond pixel region, and a second transmission region; a first electrodedisposed over the substrate in each of the first pixel region and thesecond pixel region; a display layer disposed on the first electrode; asecond electrode facing the first electrode and disposed on the displaylayer; and a capping structure disposed on the second electrode, whereinthe capping structure comprises: a first capping layer disposed on thesecond electrode in the first pixel region, the first transmissionregion, and the second pixel region; and a second capping layer disposedon the second electrode in the first pixel region, the second pixelregion, and the second transmission region.
 2. The transparent displaydevice of claim 25, wherein the capping structure has a first thicknessin the first pixel region and the second pixel region, and has a secondthickness less than the first thickness in the first transmission regionand the second transmission region.